Strain-Dependent Photodetection with Layered InSe Photoconductors

Abstract

Controlled bandgap modulation is of particular interest for next generation optoelectronic devices, allowing the development of ‘active’ or ‘reconfigurable’ detectors and emitters. In van der Waals layered semiconductors, which exhibit high strain tolerance, strain has become a notable tool for active bandgap tuning. In this work, we demonstrate a flexible bulk InSe gated photoconductor with strain-induced modulation of the bandgap energy, shifting to higher and lower energies under compression and tension, respectively. Photoluminescence measurements reveal shift rates of around 117.1 meV·%-1 in tension and 107.6 meV·%-1 in compression. Spectral responsivity measurements indicate smaller sh..